MOSFET 2N-CH 30V 6.5A 8-SOIC
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Series: | HEXFET® | Manufacturer: | International Rectifier |
FET Type: | 2 N-Channel (Dual) | FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V | Gate-Source Cutoff Voltage : | - 4.5 V |
Current - Continuous Drain (Id) @ 25° C: | 6.5A | Rds On (Max) @ Id, Vgs: | 29 mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA | Gate Charge (Qg) @ Vgs: | 33nC @ 10V |
Input Capacitance (Ciss) @ Vds: | 650pF @ 25V | Power - Max: | 2W |
Mounting Type: | Surface Mount | Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |