MOSFET
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 30 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 4 A |
Resistance Drain-Source RDS (on) : | 80 mOhms | Mounting Style : | SMD/SMT |
Package / Case : | SOIC-8 |
Technical/Catalog Information | IRF7309IPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 4A, 3A |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 2.4A, 10V |
Input Capacitance (Ciss) @ Vds | 440pF @ 15V |
Power - Max | 1.4W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 25nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF7309IPBF IRF7309IPBF |