MOSFET 2P-CH 20V 4.3A 8-SOIC
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Series: | HEXFET® | Manufacturer: | International Rectifier |
FET Type: | 2 P-Channel (Dual) | FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V | Current - Continuous Drain (Id) @ 25° C: | 4.3A |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 2.2A, 4.5V | Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Gate Charge (Qg) @ Vgs: | 22nC @ 4.5V | Input Capacitance (Ciss) @ Vds: | 610pF @ 15V |
Power Dissipation : | 120 mW | Power - Max: | 2W |
Mounting Type: | Surface Mount | Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |