MOSFET
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 25 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 3.5 A |
Resistance Drain-Source RDS (on) : | 160 mOhms | Mounting Style : | SMD/SMT |
Package / Case : | SOIC-8 |
Technical/Catalog Information | IRF7105QPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 3.5A, 2.3A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 1A, 10V |
Input Capacitance (Ciss) @ Vds | 290pF @ 15V |
Power - Max | 2W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 25nC @ 10V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF7105QPBF IRF7105QPBF |