IRF5Y5305CM

Features:

Low RDS_(on)
 Avalanche Energy Ratings
 Dynamic dv/dt Rating
 Simple Drive Requirements
 Ease of Paralleling
 Hermetically Sealed
 Light Weight


Specifications

	Parameter		Units
ID @ VGS = 10V, TC = 25°C	Continuous Drain Current	-18*	A
ID @ VGS = 10V, TC = 100°C	Continuous Drain Current	-15
IDM	Pulsed Drain Current	-72
PD @ TC = 25°C	Max. Power Dissipation	75	W
	Linear Derating Factor	0.6	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	160	mJ
IAR	Avalanche Current	-16	A
EAR	Repetitive Avalanche Energy	7.5	mJ
dv/dt	Peak Diode Recovery dv/dt	3.0	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 150
	Lead Temperature	300 (0.063in./1.6mm from case for 10sec)
	Weight	4.3 (Typical)	g

* Current is limited by package



Description

Fifth Generation HEXFET^® power MOSFETs IRF5Y5305CM from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,provides the designer with an extremely efficient device for use in a wide variety of applications.

These devices IRF5Y5305CM are well-suited for applications such as switching power supplies, motor controls, inverters,choppers, audio amplifiers and high-energy pulse circuits.