Features: Low RDS(on)Avalanche Energy RatingsDynamic dv/dt RatingSimple Drive RequirementsEase of ParallelingHermetically SealedLight WeightSpecifications Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 18* A ID @ VGS = 10V, TC = 100°C Continuous Drain Curren...
IRF5Y3205CM: Features: Low RDS(on)Avalanche Energy RatingsDynamic dv/dt RatingSimple Drive RequirementsEase of ParallelingHermetically SealedLight WeightSpecifications Parameter Units ID @ VGS = 10V...
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Parameter | Units | ||
ID @ VGS = 10V, TC = 25°C | Continuous Drain Current | 18* | A |
ID @ VGS = 10V, TC = 100°C | Continuous Drain Current | 18* | |
IDM | Pulsed Drain Current | 72 | |
PD @ TC = 25°C | Max. Power Dissipation | 100 | W |
Linear Derating Factor | 0.8 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 634 | mJ |
IAR | Avalanche Current | 18 | A |
EAR | Repetitive Avalanche Energy | 10 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 2.5 | V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
Lead Temperature | 300 (0.063in./1.6mm from case for 10sec) | ||
Weight | 4.3 (Typical) | g |
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5Y3205CM, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,provides the designer with an extremely efficient device of IRF5Y3205CM for use in a wide variety of applications.
IRF5Y3205CM are well-suited for applications such as switching power supplies, motor controls, inverters,choppers, audio amplifiers and high-energy pulse circuits.