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IRF5NJ9540

Features: · Low RDS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = -10V,TC = 25 Continuous Drain Current -18 A ID @ VGS = -10V,TC...

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SeekIC No. : 004376559 Detail

IRF5NJ9540: Features: · Low RDS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightSpecifications Paramet...

IRF5NJ9540 Data Sheet

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Part Number:
IRF5NJ9540
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low RDS(on)
· Avalanche Energy Ratings
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight


Specifications

  Parameter  
Units
ID @ VGS = -10V,TC = 25 Continuous Drain Current
-18
A
ID @ VGS = -10V,TC = 100 Continuous Drain Current
-11
IDM Pulsed Drain Current
-72
PD @TC = 25 Max. Power Dissipation
75
W
  Linear Derating Factor0
0.6
W/
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
260
mJ
IAR Avalanche Current
-11
A
EAR Repetitive Avalanche Energy
7.5
mJ
dv/dt Peak Diode Recovery dv/dt
4.1
V/ns
TJ,TSTG Operating Junction Storage Temperature Range
-55 to + 150
  Lead Temperature
300 ( for 5s)
  Weight
1.0 (Typical)
g



Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJ9540, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device of IRF5NJ9540 for use in a wide variety of applications.

IRF5NJ9540 are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.




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