IRF5NJ5305 Selling Leads, Price trend, IRF5NJ5305 DataSheet download, circuit diagram from SeekIC.com

Features: · Low RDS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = -10V,TC = 25 Continuous Drain Current -22* A ID @ VGS ...

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SeekIC No. : 004376556 Detail

IRF5NJ5305: Features: · Low RDS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightSpecifications ...

IRF5NJ5305 Data Sheet

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Part Number:: IRF5NJ5305
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/21

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What is this?

IRF500 evaluate
Features: Narrower body (IRN) will be suitable for high density installation. Light weight silicon...
IRF510 evaluate
US $.78 - .85 / Piece

MOSFET N-Chan 100V 5.6 Amp
IRF510, SiHF510 evaluate
DescriptionPower MOSFET IRF510, SiHF510

Product Details

Description

Features:

· Low R_DS(on)· Avalanche Energy Ratings
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight

Specifications

	Parameter		Units
I_D @ V_GS = -10V,T_C= 25	Continuous Drain Current	-22*	A
I_D @ V_GS = -10V,T_C= 100	Continuous Drain Current	-16
I_DM	Pulsed Drain Current	-88
P_D @T_C = 25	Max. Power Dissipation	75	W
	Linear Derating Factor0	0.6	W/
V_GS	Gate-to-Source Voltage	± 20	V
E_AS	Single Pulse Avalanche Energy	160	mJ
I_AR	Avalanche Current	-16	A
E_AR	Repetitive Avalanche Energy	7.5	mJ
dv/dt	Peak Diode Recovery dv/dt	2.8	V/ns
T_J,T_STG	Operating Junction Storage Temperature Range	-55 to + 150
	Lead Temperature	300 ( for 5s)
	Weight	1.0(Typical)	g

* Current is limited by package

Description

Fifth Generation HEXFET^® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJ5305, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device of IRF5NJ5305 for use in a wide variety of applications.

IRF5NJ5305 are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.

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IRF5NJ5305

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