Position: Home  > All Categories> Integrated Circuits (ICs) > IRF5N3710

IRF5N3710

Features: · Low RDS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightSpecifications Parameter Max. Units ID @ VGS = -10V,TC = 25 Continuous Drain Current 45 A ID @ ...

product image

IRF5N3710 Picture
See larger image
SeekIC No. : 004376552 Detail

IRF5N3710: Features: · Low RDS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightSpecifications ...

IRF5N3710 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRF5N3710
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/3/13

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Low RDS(on)
· Avalanche Energy Ratings
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight


Specifications

  Parameter
Max.
Units
ID @ VGS = -10V,TC = 25 Continuous Drain Current
45
A
ID @ VGS = -10V,TC = 100 Continuous Drain Current
30
IDM Pulsed Drain Current
180
PD @TC = 25 Max. Power Dissipation
125
W
  Linear Derating Factor
1.0
W/
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
250
mJ
IAR Avalanche Current
28
A
EAR Repetitive Avalanche Energy
12.5
mJ
dv/dt Peak Diode Recovery dv/dt
3.7
V/ns
TJ,TSTG Operating Junction Storage Temperature Range
-55 to + 150
  Lead Temperature
300 ( for 5s)
  Weight
2.6 (Typical)
g



Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5N3710, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device of IRF5N3710 for use in a wide variety of applications.

IRF5N3710 are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Integrated Circuits (ICs)
TA8435H
1MB12-140
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Crystals and Oscillators
WT325BI0030.000000
2SB49
Tools
TCP202
G084SN05 V.3
View more