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IRF5M4905

Features: · Low RDS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecifications Parameter Units ID @ VGS = -10V,TC = 25 Continuous Drain Current -35* A ID @ VGS = -10V,TC = 10...

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IRF5M4905: Features: · Low RDS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecifications Parameter ...

IRF5M4905 Data Sheet

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Part Number:
IRF5M4905
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Low RDS(on)
· Avalanche Energy Ratings
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Light Weight


Specifications

  Parameter
 
Units
ID @ VGS = -10V,TC = 25 Continuous Drain Current
-35*
A
ID @ VGS = -10V,TC = 100 Continuous Drain Current
-35*
IDM Pulsed Drain Current
-140
PD @TC = 25 Max. Power Dissipation
125
W
  Linear Derating Factor
1.0
W/
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
490
mJ
IAR Avalanche Current
-35
A
EAR Repetitive Avalanche Energy
12.5
mJ
dv/dt Peak Diode Recovery dv/dt
2.2
V/ns
TJ,TSTG Operating Junction Storage Temperature Range
-55 to + 150
  Lead Temperature
300 (0.063in./1.6mm from case for 10s)
  Weight
9.3 (Typical)
g
* Current is limited by package


Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5M4905, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device of IRF5M4905 for use in a wide variety of applications.

IRF5M4905 are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.




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