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IRF5852

Features: · Ultra Low On-Resistance· Dual N-Channel MOSFET· Surface Mount· Available in Tape & Reel· Low Gate ChargePinoutSpecifications Parameter Max. Units VDS Drain- Source Voltage 20 V ID @ TA = 25 Continuous Drain Current, VGS @ 10V 2.7 A ID @...

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SeekIC No. : 004376543 Detail

IRF5852: Features: · Ultra Low On-Resistance· Dual N-Channel MOSFET· Surface Mount· Available in Tape & Reel· Low Gate ChargePinoutSpecifications Parameter Max. Units VDS Drain- So...

IRF5852 Data Sheet

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Part Number:
IRF5852
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

· Ultra Low On-Resistance
· Dual N-Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· Low Gate Charge


Pinout

Connection Diagram


Specifications
Parameter
Max.
Units
VDS
 Drain- Source Voltage
20
V
ID @ TA = 25
 Continuous Drain Current, VGS @ 10V
2.7
A
ID @ TA = 70
 Continuous Drain Current, VGS @ 10V
2.2
IDM
 Pulsed Drain Current
11
PD @ TC = 25
 Power Dissipation
0.96
W
PD @ TC = 25
 Power Dissipation
0.62
 Linear Derating Factor
0.62
VGS
 Gate-to-Source Voltage
±30
mW/
TJ TSTG
 Junction and Storage Temperature Range
-55 to 150




Description

These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5852 provides the designer with an extremely efficient device for use in battery and load management applications.

This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5852 can provide the functionality of two SOT-23 packages in a smaller footprint. IRF5852 is unique thermal design and RDS(on) reduction enables an increase in current-handling capability.




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