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IRF5851

Specifications Parameter MaxN-Channel Max9-Channel Units VDS Drain-to-Source Voltage 20 -20 A ID @ TA = 25°C Continuous Drain Current, VGS @ -10V 2.7 -2.2 A ID @ TA = 70°C Continuous Drain Current, VGS @ -10V 2.2 -1.7 A IDM Pulsed Drain Current 11 -9.0 A P...

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SeekIC No. : 004376541 Detail

IRF5851: Specifications Parameter MaxN-Channel Max9-Channel Units VDS Drain-to-Source Voltage 20 -20 A ID @ TA = 25°C Continuous Drain Current, VGS @ -10V 2.7 -2.2 A ID @ TA = 70°C...

IRF5851 Data Sheet

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Part Number:
IRF5851
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Description



Specifications

  Parameter Max
N-Channel		 Max
9-Channel		 Units
VDS Drain-to-Source Voltage 20 -20 A
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V 2.7 -2.2 A
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V 2.2 -1.7 A
IDM Pulsed Drain Current 11 -9.0 A
PD @TA = 25°C Power Dissipation 0.96 0.96 W
PD @TA = 70°C Power Dissipation 0.62 0.62 W
  Linear Derating Factor 7.7 7.7 mW/°C
VGS Gate-to-Source Voltage ± 12 ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to +150 -55 to +150 °C



Description

These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5851 provides the designer with an extremely efficient device for use in battery and load management applications.

This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5851 can provide the functionality of two SOT-23 packages in a smaller footprint. IRF5851 is unique thermal design and RDS(on) reduction enables an increase in current-handling capability.




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