IRF5810TR Selling Leads, Price trend, IRF5810TR DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003429797 Detail

IRF5810TR: MOSFET 2P-CH 20V 2.9A 6-TSOP

IRF5810TR Data Sheet

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Part Number:: IRF5810TR
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Supply Ability:: 5000

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Upload time: 2024/5/19

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Series:	HEXFET®	Manufacturer:	International Rectifier
FET Type:	2 P-Channel (Dual)	FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V	Drain Source Voltage VDS :	+ / - 20 V
Current - Continuous Drain (Id) @ 25° C:	2.9A	Rds On (Max) @ Id, Vgs:	90 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 250µA	Gate Charge (Qg) @ Vgs:	9.6nC @ 4.5V
Input Capacitance (Ciss) @ Vds:	650pF @ 16V	Power - Max:	960mW
Mounting Type:	Surface Mount	Package / Case:	6-TSOP (0.059", 1.50mm Width)
Supplier Device Package:	Micro6?(TSOP-6)

Description

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 2.9A
Gate Charge (Qg) @ Vgs: 9.6nC @ 4.5V
Packaging: Tape & Reel (TR)
Series: HEXFET®
Manufacturer: International Rectifier
Power - Max: 960mW
Package / Case: 6-TSOP (0.059", 1.50mm Width)
Supplier Device Package: Micro6?(TSOP-6)
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) @ Vds: 650pF @ 16V

Parameters:

Technical/Catalog Information	IRF5810TR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.9A
Rds On (Max) @ Id, Vgs	90 mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) @ Vds	650pF @ 16V
Power - Max	960mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	9.6nC @ 4.5V
Package / Case	6-TSOP
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF5810TR IRF5810TR

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IRF5810TR

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