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IRF5810

Features: · Ultra Low On-Resistance· Dual P-Channel MOSFET· Surface Mount· Available in Tape & Reel· Low Gate ChargePinoutSpecifications Parameter Max. Units VDS Drain-Source Voltage -20 V ID @ TA = 25 Continuous Drain Current, VGS @ -4.5V -2.9 A ID @ TA = 7...

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SeekIC No. : 004376539 Detail

IRF5810: Features: · Ultra Low On-Resistance· Dual P-Channel MOSFET· Surface Mount· Available in Tape & Reel· Low Gate ChargePinoutSpecifications Parameter Max. Units VDS Drain-Source Vo...

IRF5810 Data Sheet

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Part Number:
IRF5810
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Ultra Low On-Resistance
· Dual P-Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· Low Gate Charge




Pinout

Connection Diagram




Specifications

Parameter
Max.
Units
VDS Drain-Source Voltage
-20
V
ID @ TA = 25 Continuous Drain Current, VGS @ -4.5V
-2.9
A
ID @ TA = 70 Continuous Drain Current, VGS @ -4.5V
-2.3
IDM Pulsed Drain Current
-11
PD @TA = 25 Maximum Power Dissipation
0.96
W
PD @TA = 70 Maximum Power Dissipation
0.62
Linear Derating Factor
0.008
W/
VGS Gate-to-Source Voltage
± 12
V
TJ,TSTG Junction and Storage Temperature Range
-55 to + 150





Description

These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5810  provides the designer with an extremely efficient device for use in battery and load management applications.

This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5810 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability.






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