DIODE MOSFET PCH-30V -3.8A 6TSOP
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Parameter |
Max. |
Units | |
VDS | Drain-Source Voltage |
-30 |
V |
ID @ TA = 25 | Continuous Drain Current, VGS @ -10V |
-3.8 |
A |
ID @ TA = 70 | Continuous Drain Current, VGS @ -10V |
-3.0 | |
IDM | Pulsed Drain Current |
-15 | |
PD @TA = 25 | Maximum Power Dissipation |
2 |
W
|
PD @TA = 70 | Maximum Power Dissipation |
1.28 | |
Linear Derating Factor |
0.02 |
W/ | |
VGS | Gate-to-Source Voltage |
± 20 |
V |
TJ,TSTG | Junction and Storage Temperature Range |
-55 to + 150 |
These P-channel MOSFETs from International Rectifier 6 utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5805 provides the designer with an extremely efficient device for use in battery and load management applications.
The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package of IRF5805 is ideal for applications where printed circuit board space is at a premium.IRF5805 is unique thermal design and RDS(on)reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
Technical/Catalog Information | IRF5805 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 3.8A |
Rds On (Max) @ Id, Vgs | 98 mOhm @ 3.8A, 10V |
Input Capacitance (Ciss) @ Vds | 511pF @ 25V |
Power - Max | 2W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 17nC @ 10V |
Package / Case | 6-TSOP |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRF5805 IRF5805 |