Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25° C: 3.4A
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FET Feature: Diode (Isolated)
Power - Max: 2W
Packaging: Tube
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
Gate Charge (Qg) @ Vgs: 37nC @ 10V
Input Capacitance (Ciss) @ Vds: 1110pF @ 25V
Series: FETKY™
Specifications
|
Parameter |
Maximum |
Units |
| ID @ TA = 25°C |
Continuous Drain Current, VGS @ -10V |
-3.4 |
A |
| ID @ TA = 70°C |
Continuous Drain Current, VGS @ -10V |
-2.7 |
A |
| IDM |
Pulsed Drain Current ➀ |
-27 |
A |
| PD @TA = 25°C |
Power Dissipation |
2.0 |
W |
| PD @TA = 70°C |
Power Dissipation |
1.3 |
W |
|
Linear Derating Factor |
16 |
mW/°C |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to +150 |
°C |
DescriptionThe FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology of IRF5803D2 with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
IRF5803D2 Data Sheet
