MOSFET MOSFT 200V 0.6A 2200mOhm 3.9nC
IRF5801TRPBF: MOSFET MOSFT 200V 0.6A 2200mOhm 3.9nC
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 0.6 A | ||
Resistance Drain-Source RDS (on) : | 2.2 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSOP-6 | Packaging : | Reel |
Technical/Catalog Information | IRF5801TRPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 600mA |
Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 360mA, 10V |
Input Capacitance (Ciss) @ Vds | 88pF @ 25V |
Power - Max | 2W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 3.9nC @ 10V |
Package / Case | 6-TSOP |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF5801TRPBF IRF5801TRPBF |