IRF5800

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 4A
Power - Max: 2W
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 17nC @ 10V
Packaging: Tube
Manufacturer: International Rectifier
Package / Case: 6-TSOP (0.059", 1.50mm Width)
Supplier Device Package: Micro6?(TSOP-6)
Input Capacitance (Ciss) @ Vds: 535pF @ 25V
Rds On (Max) @ Id, Vgs: 85 mOhm @ 4A, 10V


Features:

· Ultra Low On-Resistance
· P-Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· Low Gate Charge




Pinout

Specifications

	Parameter	Max.	Units
VDS	Drain-Source Voltage	-30	V
ID @ TA = 25	Continuous Drain Current, VGS @ -4.5V	-4.0	A
ID @ TA = 70	Continuous Drain Current, VGS @ -4.5V	-3.2
IDM	Pulsed Drain Current	-32
PD @TA = 25	Power Dissipation	2.0	W
PD @TA = 70	Power Dissipation	1.3
	Linear Derating Factor	0.016	W/
EAS	Single Pulse Avalanche Energy	20.6	mJ
VGS	Gate-to-Source Voltage	± 20	V
TJ,TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5800 provides the designer with an extremely efficient device for use in battery and load management applications.

The TSOP-6 package with IRF5800 customized leadframe produces a HEXFET^® power MOSFET with R_DS(on) 60% less than a similar size SOT-23. This package of IRF5800 is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and R_DS(on) reductionenables a current-handling increase of nearly 300% compared to the SOT-23.