FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 36A
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) @ Vgs: 63nC @ 10V
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Power - Max: 92W
Input Capacitance (Ciss) @ Vds: 1770pF @ 25V
Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
Features: Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to TjmaxSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V (Silicon Limited) |
36 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
25 |
| IDM |
Pulsed Drain Current |
140 |
| PD @TC = 25°C |
Power Dissipation |
92 |
W |
| |
Linear Derating Factor |
0.61 |
W/°C |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| EAS (Thermally limited) |
Single Pulse Avalanche Energy |
83 |
mJ |
| EAS (Tested ) |
Single Pulse Avalanche Energy Tested Value |
120 |
| IAR |
Avalanche Current |
See Fig.12a, 12b, 15, 16
|
A |
| EAR |
Repetitive Avalanche Energy |
mJ |
|
TJ
TSTG |
Operating Junction and
Storage Temperature Range
|
-55 to + 175 |
°C |
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
| |
Mounting torque, 6-32 or M3 srew |
10 lbf`in (1.1N`m) |
|
DescriptionSpecifically designed for Automotive applications IRF540ZS, ID = 36A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features IRF540ZS combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
IRF540ZS Data Sheet
