Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 36 A
Features: ` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-FreeSpecifications
|
|
Parameter |
Max. |
Units |
|
ID @ TC = 25 |
Continuous Drain Current VGS@ 10V (Silicon Limited) |
36 |
A |
|
ID @ TC = 100 |
Continuous Drain Current, VGS@10V |
25 |
|
IDM |
Pulsed Drain Current |
140 |
|
|
PD @ TC = 25 |
Maximum Power Dissipation |
92 |
W |
|
|
Linear Derating Factor |
0.61 |
W/ |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS (Thermally limited) |
Single Pulse Avalanche Energy |
83 |
mJ |
|
EAS (Tested) |
Single Pulse Avalanche Energy Tested Value |
120 |
|
IAR |
Avalanche Current |
See Fig.12a,12b,15,16 |
A |
|
EAR |
Repetitive Avalanche Energy |
mJ |
|
TJ
TSTG |
Operating Junction
Storage Temperature Range |
-55 to + 175 |
|
|
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
|
| |
Mounting Torque, 6-32 or M3 screw |
10 lbfin (1.1Nm) |
|
DescriptionSpecifically designed for Automotive applications IRF540ZPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parameters: | Technical/Catalog Information | IRF540ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 36A |
| Rds On (Max) @ Id, Vgs | 26.5 mOhm @ 22A, 10V |
| Input Capacitance (Ciss) @ Vds | 1770pF @ 25V |
| Power - Max | 92W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 63nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF540ZPBF
IRF540ZPBF
|
IRF540ZPBF Data Sheet
