IRF540ZLPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 36 A
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 26.5 m Ohms


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current VGS@ 10V (Silicon Limited)	36	A
ID @ TC = 100	Continuous Drain Current, VGS@10V	25
IDM	Pulsed Drain Current	140
PD @ TC = 25	Maximum Power Dissipation	92	W
	Linear Derating Factor	0.61	W/
VGS	Gate-to-Source Voltage	±20	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	83	mJ
EAS (Tested)	Single Pulse Avalanche Energy Tested Value	120
IAR	Avalanche Current	See Fig.12a,12b,15,16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting Torque, 6-32 or M3 screw	10 lbfin (1.1Nm)

Description

Specifically designed for Automotive applications IRF540ZLPbF, this HEXFET^® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRF540ZLPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	36A
Rds On (Max) @ Id, Vgs	26.5 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds	1770pF @ 25V
Power - Max	92W
Packaging	Tube
Gate Charge (Qg) @ Vgs	63nC @ 10V
Package / Case	TO-262-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF540ZLPBF IRF540ZLPBF