IRF540Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 36A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) @ Vgs: 63nC @ 10V
Manufacturer: International Rectifier
Power - Max: 92W
Input Capacitance (Ciss) @ Vds: 1770pF @ 25V
Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V


Features:

Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V (Silicon Limited)	36	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	25
IDM	Pulsed Drain Current	140
PD @TC = 25°C	Power Dissipation	92	W
	Linear Derating Factor	0.61	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	83	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	120
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf`in (1.1N`m)

Description

Specifically designed for Automotive applications, ID = 36A this HEXFET^® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of IRF540Z are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of IRF540Z combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.