IRF540NSPBF

Transistor Polarity : N-Channel
Continuous Drain Current : 33 A
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 44 m Ohms


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` Dynamic dv/dt Rating
`175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	33	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	23
IDM	Pulsed Drain Current	110
PD @TC = 25	Power Dissipation	130	W
	Linear Derating Factor	0.87	W/
VGS	Gate-to-Source Voltage	± 20	V
IAR	Avalanche Current	16	A
EAR	Repetitive Avalanche Energy	13	mJ
dv/dt	Peak Diode Recovery dv/dt	7.0	V/ns
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Advanced HEXFET^® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF540NSPbF, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D²Pak is a surface mount power package capable of accommodating die sizes up to HEX 4. IRF540NSPbF provides the highest power capability and the lowest possible onresistance in any existing surface mount package.  The D²Pak is suitable for high current applications because of IRF540NSPbF low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF540NL) is available for lowprofile applications.

Parameters:

Technical/Catalog Information	IRF540NSPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	33A
Rds On (Max) @ Id, Vgs	44 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	1960pF @ 25V
Power - Max	130W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	71nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF540NSPBF IRF540NSPBF