IRF540NPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Continuous Drain Current : 33 A
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @10V	33	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	23
IDM	Pulsed Drain Current	110
PD @TC = 25°C	Power Dissipation	130	W
	Linear Derating Factor	0.87	W/°C
VGS	Gate-to-Source Voltage	± 20	V
IAR	Avalanche Current	16	A
EAR	Repetitive Avalanche Energy	13	mJ
dv/dt	Peak Diode Recovery dv/dt	7.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf`in (1.1N`m)

Description

The IRF540NPBF is a HEXFET power MOSFET.Advanced HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit,combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features of the IRF540NPBF are:(1)advanced process technology; (2)ultra low on-resistance; (3)dynamic dv/dt rating; (4)175 operating temperature; (5)fast switching; (6)fully avalanche rated; (7)lead-free.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The absolute maximum ratings of the IRF540NPBF can be summarized as:(1)soldering temperature, for 10 seconds:300;(2)storage temperature range:-55 to 175;(3)operating junction temperature range:-55 to 175;(4)pulsed drain current:110 A;(5)gate-to-source voltage:±20V;(6)power dissipation:130W.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

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Parameters:

Technical/Catalog Information	IRF540NPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	33A
Rds On (Max) @ Id, Vgs	44 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	1960pF @ 25V
Power - Max	130W
Packaging	Tube
Gate Charge (Qg) @ Vgs	71nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF540NPBF IRF540NPBF