Specifications
|
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
33 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @10V |
23 |
| IDM |
Pulsed Drain Current |
110 |
| PD @TC = 25°C |
Power Dissipation |
130 |
W |
|
Linear Derating Factor |
0.87 |
W/°C |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| IAR |
Avalanche Current |
16 |
A |
| EAR |
Repetitive Avalanche Energy |
13 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
7.0 |
V/ns |
|
TJ
TSTG |
Operating Junction and
Storage Temperature Range
|
-55 to + 175 |
°C |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
Mounting torque, 6-32 or M3 srew |
10 lbf`in (1.1N`m) |
|
DescriptionThe IRF540N 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET.
The feature of the IRF540N are:(1)Ultra Low On-Resistance- rDS(ON)= 0.040, VGS = 10V; (2)Simulation Models- Temperature Compensated PSPICE and SABER Electrical Models- Spice and SABER Thermal Impedance Models- www.intersil.com; (3)Peak Current vs Pulse Width Curve; (4)UIS Rating Curve.
The absolute maximum ratings of the IRF540N can be summarized as:(1)Drain to Source Voltage (Note 1):VDSS 100 V; (2)Drain to Gate Voltage (RGS = 20k) (Note 1):VDGR 100 V; (3)Gate to Source Voltage:VGS ±20 V; (4)Drain Current Continuous (TC= 25oC, VGS = 10V) (Figure 2):ID 33A; (5)Continuous (TC= 100oC, VGS = 10V) (Figure 2) :ID 23A; (6)Pulsed Drain Current:IDM Figure 4; (7)Pulsed Avalanche Rating :UIS Figures 6, 14, 15; (8)Power Dissipation: PD 120 W; (9)Derate Above 25oC:0.80W/oC; (10)Operating and Storage Temperature of the IRF540N:TJ, TSTG: -55 to 175 oC; (11)Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s:TL 300oC; (12)Package Body for 10s, See Techbrief TB334:Tpkg 260oC.
If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .
Parameters: | Technical/Catalog Information | IRF540N |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 33A |
| Rds On (Max) @ Id, Vgs | 44 mOhm @ 16A, 10V |
| Input Capacitance (Ciss) @ Vds | 1960pF @ 25V |
| Power - Max | 130W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 71nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF540N
IRF540N
IRF540NIR ND
IRF540NIRND
IRF540NIR
|
IRF540N Data Sheet
