IRF540

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 28 A
Resistance Drain-Source RDS (on) : 0.077 Ohms


Features:

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature


Specifications

Rating	Symbol	Value		Unit
DraintoSource Voltage	VDSS	100		Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	100		Vdc
GatetoSource Voltage - Continuous                                           - Nonrepetitive (tp 3 10 s)	VGS VGSM	±20 ±40		Vdc Vdc
Drain Current - Continuous                       - Continuous @ 100                       - Single Pulse (tp 3 10 s)	ID ID IDM	27 19 95		Adc Apk
Total Power Dissipation Derate above 25	PD	145 1.16		Watts W/
Operating and Storage Temperature Range	TJ, Tstg	55 to 150
Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25 (VDD = 50 Vdc, VGS = 10 Vdc, PEAK IL = 27 Apk, L = 1.0 mH, RG = 25)	EAS	365		mJ
Thermal Resistance - JunctiontoCase°                                - JunctiontoAmbient°	RJC RA	0.86 62.5		/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	TL	260

EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

This document contains information on a new product. Specifications and information herein are subject to change without notice.


Description

This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. IRF540 new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, IRF540 are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.

Parameters:

Technical/Catalog Information	IRF540
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	22A
Rds On (Max) @ Id, Vgs	77 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	870pF @ 25V
Power - Max	85W
Packaging	Tube
Gate Charge (Qg) @ Vgs	41nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF540 IRF540 497 2758 5 ND 49727585ND 497-2758-5