IRF530N_R4942 Selling Leads, Price trend , Fairchild Semiconductor, IRF530N_R4942 DataSheet download, circuit diagram from SeekIC.com

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IRF530N_R4942: MOSFET TO-220AB N-Ch Power

IRF530N_R4942 Data Sheet

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Part Number:: IRF530N_R4942
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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MOSFET N-Chan 100V 5.6 Amp
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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	22 A
Resistance Drain-Source RDS (on) :	0.064 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-220AB

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.064 Ohms

Parameters:

Technical/Catalog Information	IRF530N_R4942
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	22A
Rds On (Max) @ Id, Vgs	64 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds	790pF @ 25V
Power - Max	85W
Packaging	Tube
Gate Charge (Qg) @ Vgs	52nC @ 20V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF530N_R4942 IRF530N_R4942 IRF530NFS ND IRF530NFSND IRF530NFS

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IRF530N_R4942

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