MOSFET TO-220AB N-Ch Power
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 22 A |
Resistance Drain-Source RDS (on) : | 0.064 Ohms | Configuration : | Single |
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole |
Package / Case : | TO-220AB |
Technical/Catalog Information | IRF530N_R4942 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 22A |
Rds On (Max) @ Id, Vgs | 64 mOhm @ 22A, 10V |
Input Capacitance (Ciss) @ Vds | 790pF @ 25V |
Power - Max | 85W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 52nC @ 20V |
Package / Case | TO-220AB |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRF530N_R4942 IRF530N_R4942 IRF530NFS ND IRF530NFSND IRF530NFS |