FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 17A
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 37nC @ 10V
Power - Max: 3.8W
Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds: 920pF @ 25V
Supplier Device Package: TO-262
Specifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
17 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
12 |
A |
| IDM |
Pulsed Drain Current |
60 |
A |
| PD @TA = 25°C |
Power Dissipation |
3.8 |
w |
| PD @TC = 25°C |
Power Dissipation |
70 |
W |
| |
Linear Derating Factor |
0.47 |
mW/°C |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| IAR |
Avalanche Current |
9.0 |
A |
| EAR |
Repetitive Avalanche Energy |
7.0 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
7.4 |
V/ns |
| TJ , TSTG |
Junction and Storage Temperature Range |
-55 to +175 |
°C |
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
°C
|
DescriptionAdvanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit of IRF530NL, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. IRF530NL provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of IRF530NL low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF530NL) is available for low-profile applications.
IRF530NL Data Sheet
