Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Mounting Style
: Through Hole
Transistor Polarity
: P-Channel
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: 20 V
Drain-Source Breakdown Voltage
: - 55 V
Continuous Drain Current
: - 31 A
Specifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @- 10V |
-31 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @- 10V |
-22 |
| IDM |
Pulsed Drain Current |
-110 |
| PD @TC = 25°C |
Power Dissipation |
110 |
W |
| |
Linear Derating Factor |
0.71 |
W/°C |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| EAS |
Single Pulse Avalanche Energy |
± 20 |
mJ |
| IAR |
Avalanche Current |
-16 |
A |
| EAR |
Repetitive Avalanche Energy |
11 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
|
TJ
TSTG |
Operating Junction and
Storage Temperature Range
|
-55 to + 175 |
°C |
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
| |
Mounting torque, 6-32 or M3 srew |
10 lbf`in (1.1N`m) |
|
DescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF5305PbF, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,IRF5305PbF provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to IRF5305PbF wide acceptance throughout the industry.
Parameters: | Technical/Catalog Information | IRF5305PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 31A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 16A, 10V |
| Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
| Power - Max | 110W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 63nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF5305PBF
IRF5305PBF
|
IRF5305PBF Data Sheet
