Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Continuous Drain Current
: 14 A
Resistance Drain-Source RDS (on)
: 0.16 Ohms
Features: • Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated TemperatureSpecifications
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
100 |
Vdc |
|
DraintoGate Voltage (RGS = 1.0 MW) |
VDGR |
100 |
Vdc |
GatetoSource Voltage - Continuous
GatetoSource Voltage - Single Pulse (tp 3 50S) |
VGS
VGSM |
±20
±25 |
Vdc
Vdc
|
Drain Current - Continuous
Drain Current - Continuous @ 100
Drain Current - Single Pulse (tp 3 10 S) |
ID
ID
IDM |
14
10
49 |
Adc
Apk |
Total Power Dissipation @ TC = 25
Derate above 25 |
PD |
78
0.63 |
Watts
W/ |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
|
DescriptionThis advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design of IRF530 also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, these devices of IRF530 are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.
Parameters: | Technical/Catalog Information | IRF530 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 7A, 10V |
| Input Capacitance (Ciss) @ Vds | 458pF @ 25V |
| Power - Max | 60W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 21nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF530
IRF530
497 2780 5 ND
49727805ND
497-2780-5
|
IRF530 Data Sheet
