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IRF520VSPbF

MOSFET N-CH 100V 9.6A D2PAK

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SeekIC No. : 004376510 Detail

IRF520VSPbF: MOSFET N-CH 100V 9.6A D2PAK

IRF520VSPbF Data Sheet

floor Price/Ceiling Price

US $ .32~.61 / Piece | Get Latest Price
Part Number:
IRF520VSPbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
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  • 100~250
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  • Unit Price
  • $.61
  • $.44
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  • $.39
  • $.37
  • $.35
  • $.32
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

·Advanced Process Technology
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
·Optimized for SMPS Applications
·Lead-Free


Specifications

  Parameter Max. Units
ID @ TA=25 Continuous Drain Current, VGS @ 10V 9.6 A
ID @ TC=70 Continuous Drain Current, VGS @ 10V 6.8 A
IDM Pulsed Drain Current 37 A
PD @ TC=25 Power Dissipation 44 W
  Linear Derating Factor 0.29 W/
VGS Gate-to-Source Voltage ±20 V
IAR Avalanche Current 9.2 A
EAR Repetitive Avalanche Energy 4.4 mJ
dv/dt Peak Diode Recovery dv/dt 7.0 V/ns
Tj Operating Junction and -55 to +175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to +175
  Mounting torque, 6-32 or M3 srew 300 (1.6mm from case )



Description

Advanced HEXFET® Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit of IRF520VSPbF, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. IRF520VSPbF provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of IRF520VSPbF low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF520VL) is available for low-profile applications.




Parameters:

Technical/Catalog InformationIRF520VSPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C9.6A
Rds On (Max) @ Id, Vgs165 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds 560pF @ 25V
Power - Max44W
PackagingTube
Gate Charge (Qg) @ Vgs22nC @ 10V
Package / CaseD²Pak, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF520VSPBF
IRF520VSPBF



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