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IRF520VPbF

MOSFET N-CH 100V 9.6A TO-220AB

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SeekIC No. : 004376508 Detail

IRF520VPbF: MOSFET N-CH 100V 9.6A TO-220AB

IRF520VPbF Data Sheet

floor Price/Ceiling Price

US $ .45~.45 / Piece | Get Latest Price
Part Number:
IRF520VPbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~3000
  • Unit Price
  • $.45
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
 Lead-Free


Specifications

  Parameter
Max.
Units
ID @ TA = 25 Continuous Drain Current, VGS @ 10V
9.6
A
ID @ TA= 100 Continuous Drain Current, VGS @ 10V
6.8
IDM Pulsed Drain Current
37
PD @TC = 25 Power Dissipation
44
W
  Linear Derating Factor
0.29
W/
VGS Gate-to-Source Voltage
±20
V
IAR Avalanche Current
9.2
  
EAR Repetitive Avalanche Energy
4.4
  
dv/dt Peak Diode Recovery dv/dt 
7.0
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)



Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520VPbF, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to IRF520VPbF wide acceptance throughout the industry.




Parameters:

Technical/Catalog InformationIRF520VPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C9.6A
Rds On (Max) @ Id, Vgs165 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds 560pF @ 25V
Power - Max44W
PackagingTube
Gate Charge (Qg) @ Vgs22nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF520VPBF
IRF520VPBF



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