Features: ·Advanced Process Technology ·Ultra Low On-Resistance ·Dynamic dv/dt Rating ·175°C Operating Temperature ·Fast Switching ·Fully Avalanche Rated ·Optimized for SMPS ApplicationsSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -40 A ...
IRF520VL: Features: ·Advanced Process Technology ·Ultra Low On-Resistance ·Dynamic dv/dt Rating ·175°C Operating Temperature ·Fast Switching ·Fully Avalanche Rated ·Optimized for SMPS ApplicationsSpecificatio...
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Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | -40 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | -29 | |
IDM | Pulsed Drain Current | -140 | |
PD @TC = 25°C | Power Dissipation | 200 | W |
Linear Derating Factor | 1.3 | W/°C | |
VGS | Gate-to-Source Voltage | ± 20 | V |
IAR | Avalanche Current | 9.2 | A |
EAR | Repetitive Avalanche Energy | 4.4 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 7.0 | V/ns |
T J TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520VL, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. IRF520VL provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D 2Pak is suitable for high current applications because of IRF520VL low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF520VL) is available for low-profile applications.