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IRF520V

Features: ·Advanced Process Technology·Ultra Low On-Resistance·Dynamic dv/dt Rating·175°C Operating Temperature· Fast Switching· Fully Avalanche Rated·Optimized for SMPS ApplicationsSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.6 A ID @...

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SeekIC No. : 004376506 Detail

IRF520V: Features: ·Advanced Process Technology·Ultra Low On-Resistance·Dynamic dv/dt Rating·175°C Operating Temperature· Fast Switching· Fully Avalanche Rated·Optimized for SMPS ApplicationsSpecifications ...

IRF520V Data Sheet

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Part Number:
IRF520V
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
·  Fast Switching
·  Fully Avalanche Rated
· Optimized for SMPS Applications


Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.6 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.8
IDM Pulsed Drain Current 37
PD @TC = 25°C Power Dissipation 44 W
Linear Derating Factor 0.29 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 780 mJ
IAR Avalanche Current 9.2 A
EAR Repetitive Avalanche Energy 4.4 mJ
dv/dt Peak Diode Recovery dv/dt 7.0 V/ns
T J
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf*in (1.1N*m)



Description

Advanced HEXFET®  Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit of IRF520V, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to IRF520V wide acceptance throughout the industry. 




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