Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 9.7 A
Features: • Advanced Process Technology
• Dynamic dv/dt Rating
• 175 Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead-FreeSpecifications
|
Parameter |
Max. |
Units |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V |
9.7 |
A |
| ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V |
6.8 |
| IDM |
Pulsed Drain Current |
38 |
| PD @TC = 25 |
Power Dissipation |
48 |
W |
|
Linear Derating Factor |
0.32 |
W/ |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| EAS |
Single Pulse Avalanche Energy |
91 |
mJ |
| IAR |
Avalanche Current |
5.7 |
A |
| EAR |
Repetitive Avalanche Energy |
4.8 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
|
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
|
Mounting torque, 6-32 or M3 srew |
10 lbf`in (1.1N`m) |
|
DescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520NPbF, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to IRF520NPbF wide acceptance throughout the industry.
Parameters: | Technical/Catalog Information | IRF520NPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 9.7A |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 5.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 330pF @ 25V |
| Power - Max | 48W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF520NPBF
IRF520NPBF
|
IRF520NPBF Data Sheet
