IRF520NLPBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 25nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Current - Continuous Drain (Id) @ 25° C: 9.7A
Input Capacitance (Ciss) @ Vds: 330pF @ 25V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V
Power - Max: 3.8W
Supplier Device Package: TO-262


Features:






Specifications






Description

      The IRF520NSPbF and IRF520NLPbF has 6 features.The first one is advanced process technology.The second one is surface mount (IRF520NS).The third one is low-profit through-hole(IRF520NL).The fourth one is 175 operating temperature.The fifth one is fast switching.The sixth one is fully aavalanche rated.
      Fifth generation HEXFETs from international rectifier utilize advanced processing technologys to achieve the lowest possible on-resistance per silicon area.This benefit,combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know for,provides the designer with an extremely effcient device for use in a wide variety of applications.The D-PAK is surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount pakage.The D pak is suitable for high current aoolications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.The through-hole version (IRF520NL) is available for low-profile applictions.
      The IRF520NSPbF and IRF520NLPbF has some information about absolute maximum ratings.ID @ Tc = 25,when parameter is continuous drain current,VGS @ 10 V,the max is 9.7,the units is A.ID @ Tc = 100,when parameter is continuous drain current,VGS @ 10 V,the max is 6.8,the units is A.IDM,when parameter is pulsed drain current,the max is 38,the units is A.PD @ TA=25 ,When parameter is power dissipation,the max is 3.8,the units is W.PD @ Tc=25 ,When parameter is power dissipation,the max is 48,the units is W.
      At present there is not too much information about this model.If you are willing to find more  about the IRF520NSPbF and IRF520NLPbF, please pay attention to our web! We will promptly update the relevant  information.

Parameters:

Technical/Catalog Information	IRF520NLPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	9.7A
Rds On (Max) @ Id, Vgs	200 mOhm @ 5.7A, 10V
Input Capacitance (Ciss) @ Vds	330pF @ 25V
Power - Max	3.8W
Packaging	Tube
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	TO-262-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF520NLPBF IRF520NLPBF