IRF520N

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 25nC @ 10V
Power - Max: 48W
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25° C: 9.7A
Input Capacitance (Ciss) @ Vds: 330pF @ 25V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V


Features:

Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated


Specifications

	Parameter	Max.	Unit
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	9.7	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	6.8
IDM	Pulsed Drain Current	38
PD @TC = 25°C	Power Dissipation	48	W
	Linear Derating Factor	0.32	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	91	mJ
IAR	Avalanche Current	5.7	A
EAR	Repetitive Avalanche Energy	4.8	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf*in (1.1N*m)

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit of IRF520N, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to IRF520N wide acceptance throughout the industry.