IRF520L

Features:

· Advanced Process Technology
· Surface Mount (IRF520NS)
· Low-profile through-hole (IRF520NL)
·175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	9.7	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	6.8
IDM	Pulsed Drain Current	38
PD @TC = 25°C	Power Dissipation	3.8	W
PD @TC = 25°C	Power Dissipation	48	W
	Linear Derating Factor	0.32	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	91	mJ
IAR	Avalanche Current	5.7	A
EAR	Repetitive Avalanche Energy	4.8	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T J TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. This benefit of IRF520L, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D ²Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. IRF520L provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D² Pak is suitable for high current applications because of IRF520L low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF520NL) is available for low-profile applications.