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IRF510A

MOSFET 100V .2 OHM 33W

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SeekIC No. : 00163174 Detail

IRF510A: MOSFET 100V .2 OHM 33W

IRF510A Data Sheet

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Part Number:
IRF510A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5.6 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 0.4 Ohms
Continuous Drain Current : 5.6 A


Features:

 Avalanche  Rugged  Technology
Rugged  Gate  Oxide  Technology
Lower  Input  Capacitance
Improved  Gate  Charge
Extended  Safe  Operating  Area
175°C Operating  Temperature
Lower  Leakage  Current  :  10 A (Max.)  @  VDS= 100V
Lower  RDS(ON) :  0.289  (Typ.)


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 100 V
ID Continuous Drain Current (TC=25) 5.6 A
Continuous Drain Current (TC=100) 4
IDM Drain Current-Pulsed (1) 20 V
VGS Gate-to-Source Voltage ±20 A
EAS Single Pulsed Avalanche Energy (2) 63 mJ
IAR Avalanche Current (1) 5.6 A
EAR Repetitive Avalanche Energy (1) 3.3 mJ
dv/dt Peak Diode Recovery dv/dt (2) 6.5 V/ns
PD Total Power Dissipation (TC=25)
Linear Derating Factor		 33
0.22		 W
W/°C
TJ , TSTG Operating Junction and
Storage Temperature Range		 - 55 to +175 °C
TL Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds		 300



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