IRF4905STRLPBF

MOSFET MOSFT PCh -55V -74A 20mOhm 120nC

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SeekIC No. : 00147104 Detail

IRF4905STRLPBF: MOSFET MOSFT PCh -55V -74A 20mOhm 120nC

floor Price/Ceiling Price

US $ 1.16~2.39 / Piece | Get Latest Price
Part Number:
IRF4905STRLPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.39
  • $1.64
  • $1.21
  • $1.16
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 55 V
Continuous Drain Current : - 70 A Resistance Drain-Source RDS (on) : 20 mOhms
Configuration : Single Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : D2PAK
Packaging : Reel    

Description

Gate-Source Breakdown Voltage :
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 20 mOhms
Continuous Drain Current : - 70 A
Drain-Source Breakdown Voltage : - 55 V


Description

The IRF4905STRLPBF is a kind of fifth generation HEXFETs from international rectifier which utilize advanced processing techniques to achieve extremly low on-resistance per silicon area. The features of IRF4905STRLPBF include: (1)advanced process technology; (2)ultra low on-resistance; (3)dynamic dv/dt rating; (4)175 operating temperature; (5)fast switching; (6)P-channel ; (7)fully avalanche rated.

The following is about the absolute maximum ratings of IRF4905STRLPB: (1)continuous drain current(ID) is -74 A(VGS is -10 V and Tc is 25; (2)pulsed drain current(IDM) is -260 A; (3)power dissipation(PD) is 200 W when Tc is 25; (4)linear derating factor is 1.3 W/; (5)gate-to-source voltage(VGS) is ±20V; (6)single pulse avalanche energy(EAR) is 930 mJ; (7)repetitive avalanche energy(EAR) is 20 mJ; (8)operating temperature(Topr) is -55 to +175.

The electrical characteristics of the IRF4905STRLPBF are: (1)drain-to-source breakdown voltage: -55V min at VGS=0V, ID=-250A; (2)breakdown voltage temp. coefficient; -0.05V/ typ at reference to 25, ID=-1mA; (3)static drain-to-source on-resistance: 0.02 max at VGS=-10V, ID=-38A; (4)gate thershold voltage: -2.0V min and -4.0V max at VDS=VGS, ID=-250A.




Parameters:

Technical/Catalog InformationIRF4905STRLPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C42A
Rds On (Max) @ Id, Vgs20 mOhm @ 42A, 10V
Input Capacitance (Ciss) @ Vds 3500pF @ 25V
Power - Max170W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs180nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF4905STRLPBF
IRF4905STRLPBF



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