IRF4905PBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : - 55 V
Continuous Drain Current : - 74 A


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· P-Channel
· Fully Avalanche Rated
· Lead-Free




Specifications

Parameter	Symbol	Rating	Unit
Continuous Drain Current, VGS @ -10V,Tc = 25	ID	-74	A
Continuous Drain Current, VGS @ -10V,Tc = 100	ID	-52	A
Pulsed Drain Current*1	IDM	-260	A
Power Dissipation Tc = 25	PD	200	W
Linear Derating Factor		1.3	/W
Gate-to-Source Voltage	VGS	±20	V
Single Pulse Avalanche Energy*4	EAS	930	mJ
Avalanche Current *1	IAR	-38	A
Repetitive Avalanche Energy	EAR	20	mJ
Peak Diode Recovery dv/dt *2	dv/dt	-5	V/ns
Operating Junction and Storage Temperature Range	TJ,TSTG	-55 to + 175
Soldering Temperature, for 10 seconds	300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw	10 lbf•in (1.1N•m)

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF4905PbF, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO- 220 contribute to IRF4905PbF wide acceptance throughout the industry.

The IRF4905PBF is a HEXFET power MOSFET.Fifth Generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF4905PbF, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features of the IRF4905PBF are:(1)advanced process technology; (2)ultra low on-resistance; (3)dynamic dv/dt rating; (4)175 operating temperature; (5)fast switching; (6)p-channel; (7)fully avalanche rated; (8)lead-free.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The absolute maximum ratings of the IRF4905PBF can be summarized as:(1)soldering temperature, for 10 seconds:300;(2)storage temperature range:-55 to 175;(3)operating junction temperature range:-55 to 175;(4)pulsed drain current:-260 A;(5)gate-to-source voltage:±20V;(6)power dissipation:200W.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

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Parameters:

Technical/Catalog Information	IRF4905PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	74A
Rds On (Max) @ Id, Vgs	20 mOhm @ 38A, 10V
Input Capacitance (Ciss) @ Vds	3400pF @ 25V
Power - Max	200W
Packaging	Tube
Gate Charge (Qg) @ Vgs	180nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF4905PBF IRF4905PBF