IRF4905L

The IRF4905L is a kind of fifth generation HEXFETs from international rectifier which utilize advanced processing techniques to achieve extremly low on-resistance per silicon area. The features of IRF4905L include: (1)advanced process technology; (2)surface mount; (3)kow-profile through-hole; (4)175 operating temperature; (5)fast switching; (6)P-channel ; (7)fully avalanche rated.

The following is about the absolute maximum ratings of IRF4905L: (1)continuous drain current(ID) is -74 A(VGS is -10 V and Tc is 25; (2)pulsed drain current(IDM) is -260 A; (3)power dissipation(PD) is 200 W when Tc is 25; (4)linear derating factor is 1.3 W/; (5)gate-to-source voltage(VGS) is ±20V; (6)single pulse avalanche energy(EAR) is 930 mJ; (7)repetitive avalanche energy(EAR) is 20 mJ; (8)operating temperature(Topr) is -55 to +175.

The electrical characteristics of the IRF4905L are: (1)drain-to-source breakdown voltage: -55V min at VGS=0V, ID=-250A; (2)breakdown voltage temp. coefficient; -0.05V/ typ at reference to 25, ID=-1mA; (3)static drain-to-source on-resistance: 0.02 max at VGS=-10V, ID=-38A; (4)gate thershold voltage: -2.0V min and -4.0V max at VDS=VGS, ID=-250A.