IRF4905

Maximum Operating Temperature :
Mounting Style :
Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Transistor Polarity : P-Channel
Resistance Drain-Source RDS (on) : 20 mOhms
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 74 A


Description

The IRF4905 is a kind of fifth generation HEXFETs from international rectifier which utilize advanced processing techniques to achieve extremly low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedied device design that HEXFET power MOSFETs are well known for, provides the designer with an extermly efficient and reliable device for use in a wide variety of applications.

Features of the IRF4905 are:(1)advanced process technology; (2)ultra low on-resistance; (3)dynamic dv/dt rating; (4)175 operating temperature; (5)fast switching; (6)P-channel ; (7)fully avalanche rated.

The absolute maximum ratings of the IRF4905 can be summarized as:(1): continuous drain current(ID) is -74 A(VGS is -10 V and Tc is 25; (2): pulsed drain current(IDM) is -260 A; (3): power dissipation(PD) is 200 W when Tc is 25; (4): linear derating factor is 1.3 W/; (5): gate-to-source voltage(VGS) is ±20V; (6): single pulse avalanche energy(EAR) is 930 mJ; (7): repetitive avalanche energy(EAR) is 20 mJ; (8): operating temperature(Topr) is -55 to +175.

Parameters:

Technical/Catalog Information	IRF4905
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	74A
Rds On (Max) @ Id, Vgs	20 mOhm @ 38A, 10V
Input Capacitance (Ciss) @ Vds	3400pF @ 25V
Power - Max	200W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	180nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF4905 IRF4905