IRF460A

The IRF460A is the key to International Rectifier's advanced line of power MOSFET transistors. The features of IRF460A are: (1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Drive Requirements; (5)Ease of Paralleling.

The following is about the absolute maximum ratings of IRF460A: (1)Continuous Drain Current: 21 A ; (2)Continuous Drain Current: 14 A; (3)Pulsed Drain Current: 84 A; (4)Max. Power Dissipation: 300 w ; (5)Linear Derating Factor: 2.4 W/°C ; (6)Gate-to-Source Voltage: ±20 V ; (7)Single Pulse Avalanche Energy: 1200 mJ ; (8)Avalanche Current: 21 A ; (9)Repetitive Avalanche Energy: 30 mJ ; (10)Peak Diode Recovery dv/dt: 3.5 V/ns ; (11)Operating Junction: 55 to 150 °C ; (12)Storage Temperature Range: 55 to 150 °C ; (13)Lead Temperature: 300 (0.063 in. (1.6mm) from case for 10s)  ; (14)Weight: 11.5(typical) g.

The electrical characteristics of the IRF460A are: (1)drain-source breakdown voltage: 500V min at VGS=0V; (2)gate thresholad voltage: 2.0V min and 4.0V max at VDS=VGS, ID=250A; (3)gate-source leakage forward: 100nA max at VGS=20V; (4)gate-source leakage reverse: -100nA max at VGS=-20V; (5)zero gate voltage drain current: 250A max at VDS=400V, VGS=0V; (6)total gate charge: 84nC min and 190nC max at VGS=10V, ID=21A, VDS=250V.