IRF460

Features: · Repetitive Avalanche Ratings· Dynamic dv/dt Rating· Hermetically Sealed· Simple Drive Requirements· Ease of ParallelingSpecifications Parameter Units ID @ VGS = 0V, TC = 25°C Continuous Drain Current 21 A ID @ VGS = 0V, TC = 100°C Continuous Drai...

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IRF460 Picture
SeekIC No. : 004376492 Detail

IRF460: Features: · Repetitive Avalanche Ratings· Dynamic dv/dt Rating· Hermetically Sealed· Simple Drive Requirements· Ease of ParallelingSpecifications Parameter Units ID @ VGS = 0V...

floor Price/Ceiling Price

Part Number:
IRF460
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/13

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Product Details

Description



Features:

· Repetitive Avalanche Ratings
· Dynamic dv/dt Rating
· Hermetically Sealed
· Simple Drive Requirements
· Ease of Paralleling



Specifications

Parameter
Units
ID @ VGS = 0V, TC = 25°C
Continuous Drain Current
21
A
ID @ VGS = 0V, TC = 100°C
Continuous Drain Current
14
IDM
Pulsed Drain Current
84
PD @ TC = 25°C
Max. Power Dissipation
300
w
Linear Derating Factor
2.4
W/°C
V
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
1200
mJ
IAR
Avalanche Current
21
A
EAR
Repetitive Avalanche Energy
30
mJ
dv/dt
Peak Diode Recovery dv/dt
3.5
V/ns

TJ

TSTG

Operating Junction

Storage Temperature Range

55 to 150
°C
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
11.5(typical)
g



Description

The HEXFET® technology of the IRF460 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.

The HEXFET transistors of the IRF460 also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.




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