IRF450

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 12A
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Drain to Source Voltage (Vdss): 500V
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 150W
Input Capacitance (Ciss) @ Vds: 2700pF @ 25V
Gate Charge (Qg) @ Vgs: 120nC @ 10V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 500 mOhm @ 12A, 10V
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)


Features:

· Repetitive Avalanche Ratings
· Dynamic dv/dt Rating
· Hermetically Sealed
· Simple Drive Requirements
· Ease of Paralleling


Specifications

	Parameter		Units
ID @ TC = 25°C	Continuous Drain Current	12	A
ID @ TC = 100°C	Continuous Drain Current	7.75
IDM	Pulsed Drain Current	48
PD @TC = 25°C	Power Dissipation	150	W
	Linear Derating Factor	1.2	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	8.0	mJ
IAR	Avalanche Current	12	A
EAR	Repetitive Avalanche Energy	-	mJ
dv/dt	Peak Diode Recovery dv/dt	3.5	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	11.5 (typical)	g

Parameters:

Technical/Catalog Information	IRF450
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	500 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	2700pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	120nC @ 10V
Package / Case	TO-204, TO-3
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF450 IRF450