IRF423

The IRF423 is n-channelT, enhancement mode, power MOSFETs designed for high speed application such as switching power supplies, converters, AC and DC motor controls. The features of IRF423 are: (1)low RDS(ON); (2)improved inductive ruggedness; (3)excellent high voltage stability; (4)fast switching times; (5)rugged polysilicon gate cell structure; (6)low input capacitance; (7)extended safe operating area.

The following is about the absolute maximum ratings of IRF423: (1)drain-source voltage: 500V; (2)drain-gate voltage: 500V; (3)gate-source voltage: ±20V; (4)operating and storage junction temperature range: -65 to +150; (5)maximum lead temperature for soldering purposes, 1/8" from case for 5s: 275.

The electrical characteristics of the IRF423 are: (1)drain-source breakdown voltage: 500V min at VGS=0V; (2)zero gate voltage drain current: 250A max at VDS=rating VDSS, VGS=0V; (3)gate-body leakage current: ±100nA max at VGS=±20V, VDS=0V; (4)gate threshold voltage: 2.0V min and 4.0 max at ID=250A, VDS=VGS; (5)static drain-source on-state resistance: 3.0 max at VGS=10V, ID=1.0A; (6)drain-source on-voltage: 10V max at VGS=10V, ID=2.0A.