IRF420

The features of IRF420 are: (1)low RDS(ON) at high voltage; (2)improved inductive ruggedness; (3)excellent high voltage stability; (4)fast switching times; (5)rugged polysilicon gate cell structure; (6)low input capacitance; (7)extended safe operating area.

The following is about the absolute maximum ratings of IRF420: (1)drain-source voltage: 500V; (2)drain-gate voltage: 500V; (3)gate-source voltage: ±20V; (4)continuous drain current TC=25: 2.5A; (5)continuous drain current TC=100: 1.5A; (6)drain current-pulse: 10A; (7)gate current-pulse: ±1.5A; (8)total device dissipation @ TC=25, PD: 40 W and derate 0.32 W/ above 25; (9)operating and storage junction temperature range: -65 to +150.

The electrical characteristics of the IRF420 are: (1)drain-source breakdown voltage: 500V min at VGS=0V; (2)gate thresholad voltage: 2.0V min and 4.0V max at VDS=VGS, ID=250A; (3)gate-source leakage forward: 100nA max at VGS=20V; (4)gate-source leakage reverse: -100nA max at VGS=-20V; (5)zero gate voltage: 250A max at VDS=max. rating, VGS=0V or 1000A max at VDS=max. ratingx0.8, VGS=0V, TC=125; (6)on-state drain-source current: 2.5A min; (7)static drain-source on-state resistance: 2.5 typ and 3.0 max at VGS=10V, ID=1.0A.