Application· Integrated Starter Alternator· 42 Volts Automotive Electrical SystemsSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 106 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 75 IDM Pulsed Drain Current 550...
IRF3808S: Application· Integrated Starter Alternator· 42 Volts Automotive Electrical SystemsSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 106 ...
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Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
106 |
A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
75 | |
IDM | Pulsed Drain Current |
550 | |
PD @TC = 25°C | Power Dissipation |
200 |
W |
Linear Derating Factor |
1.3 |
W/°C | |
VGS | Gate-to-Source Voltage |
± 20 |
V |
EAS | Single Pulse Avalanche Energy |
430 |
mJ |
IAR | Avalanche Current |
82 |
A |
EAR | Repetitive Avalanche Energy |
See Fig.12a, 12b, 15, 16 |
mJ |
dv/dt | Peak Diode Recovery dv/dt |
5.5 |
V/ns |
TJ |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
Planar Stripe HEXFET ® Power MOSFET of the IRF3808S utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RJC, fast switching speed and improved repetitive avalanche rating. This combination of the IRF3808S makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications.