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IRF3808S

Application· Integrated Starter Alternator· 42 Volts Automotive Electrical SystemsSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 106 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 75 IDM Pulsed Drain Current 550...

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IRF3808S: Application· Integrated Starter Alternator· 42 Volts Automotive Electrical SystemsSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 106 ...

IRF3808S Data Sheet

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Part Number:
IRF3808S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Description



Application

· Integrated Starter Alternator
· 42 Volts Automotive Electrical Systems


Specifications

 
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
106
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
75
IDM Pulsed Drain Current
550
PD @TC = 25°C Power Dissipation
200
W
  Linear Derating Factor
1.3
W/°C
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
430
mJ
IAR Avalanche Current
82
A
EAR Repetitive Avalanche Energy
See Fig.12a, 12b, 15, 16
mJ
dv/dt Peak Diode Recovery dv/dt
5.5
V/ns

TJ
TSTG

 Operating Junction and
Storage Temperature Range
-55 to + 175
°C
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )



Description

Planar Stripe HEXFET ® Power MOSFET of the IRF3808S utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RJC, fast switching speed and improved repetitive avalanche rating. This combination of the IRF3808S makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications.




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