IRF3808LPBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 75V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) @ Vgs: 220nC @ 10V
Power - Max: 200W
Manufacturer: International Rectifier
Supplier Device Package: TO-262
Current - Continuous Drain (Id) @ 25° C: 106A
Rds On (Max) @ Id, Vgs: 7 mOhm @ 82A, 10V
Input Capacitance (Ciss) @ Vds: 5310pF @ 25V


Application

Integrated Starter Alternator
42 Volts Automotive Electrical Systems
Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	106	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	75
IDM	Pulsed Drain Current	550
PD @ TC = 25	Max. Power Dissipation	300	W
	Linear Derating Factor	1.3	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	430	mJ
IAR	Avalanche Current	82	A
EAR	Repetitive Avalanche Energy	See Fig.12a, 12b, 15, 16	mJ
dv/dt	Peak Diode Recovery dv/dt	5.5	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6 mm from case)

Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
Starting T_J = 25, L = 0.130mH R_G = 25, I_AS = 82A. (See Figure 12).
 I_SD 82A, di/dt 310A/s, V_DD V_(BR)DSS,T_J 175
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Limited by T_Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.


Description

Designed specifically for Automotive applications of the IRF3808LPbF, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175 junction operating temperature, low RJC, fast switching speed and improved repetitive avalanche rating. This combination of the IRF3808LPbF makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRF3808LPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	106A
Rds On (Max) @ Id, Vgs	7 mOhm @ 82A, 10V
Input Capacitance (Ciss) @ Vds	5310pF @ 25V
Power - Max	200W
Packaging	Tube
Gate Charge (Qg) @ Vgs	220nC @ 10V
Package / Case	TO-262-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF3808LPBF IRF3808LPBF